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Amirhossein Askarian & Gholamreza Moradi

Modified Transition for Substrate Integrated Waveguide(SIW) Structures

(Volume 85 - Année 2016 — Actes de colloques — Special edition)
DOI: 10.25518/0037-9565.5281
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Abstract

In this paper a new X-band SIW to Microstrip transition based on SIW structure is proposed. The recent transition has better performance in terms of return loss than those of in the traditional Microstrip tapers transition. Chebyshev multi-section matching transformer is utilized in order to inter-stage network between Microstrip and SIW, whereof it is the most optimum and efficient in matching networks theory. The 5th-order Chebyshev polynomial is employed to get about 30 dB return loss. For this purpose, curve-fitting technique is utilized to obtain a mathematical function based on Chebyshev polynomial which presents the optimum position of vias in SIW transition. In order to validation of theoretical method and results, a full-wave simulation is carried out by CST STUDIO SUITE software.

Keywords : Chebyshev, curve-fitting, high-Q factor, permittivity, RWG, SIW, TE, TEM, X-band

Pour citer cet article

Amirhossein Askarian & Gholamreza Moradi, «Modified Transition for Substrate Integrated Waveguide(SIW) Structures», Bulletin de la Société Royale des Sciences de Liège [En ligne], Volume 85 - Année 2016, Actes de colloques, Special edition, 203 - 214 URL : https://popups.uliege.be/0037-9565/index.php?id=5281.

A propos de : Amirhossein Askarian

Electrical Engineering Faculty of Amirkabir University of Technology (Tehran Polytechnic), Tehran, Iran, Askarian.amirhossein@aut.ac.ir.

A propos de : Gholamreza Moradi

Electrical Engineering Faculty of Amirkabir University of Technology (Tehran Polytechnic), Tehran, Iran, Ghmoradi@aut.ac.ir .